Invention Grant
US08050117B2 Command generation circuit and semiconductor memory device 有权
命令生成电路和半导体存储器件

Command generation circuit and semiconductor memory device
Abstract:
There is provided a command generation circuit. The command generation circuit includes a first driving unit driving an output node in response to an internal MRS command and a RAS idle signal; a second driving unit driving the output node in response to an off-signal; and a latch unit latching a signal at the output node in response to a power-up signal and generating an SRR command.
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