Invention Grant
- Patent Title: Semiconductor memory device and internal data transmission method thereof
- Patent Title (中): 半导体存储器件及其内部数据传输方法
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Application No.: US12798644Application Date: 2010-04-08
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Publication No.: US08050130B2Publication Date: 2011-11-01
- Inventor: Sung-Hyun Lee , Dong-Soo Kang
- Applicant: Sung-Hyun Lee , Dong-Soo Kang
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2009-0061826 20090707
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
In a semiconductor memory device and an internal data transmission method thereof, the device includes a memory controller, a pair of data lines, and a plurality of memory banks. During an internal data transmission operation, the memory controller externally receives and stores a source address and a target address in response to an externally applied command and outputs an internal control signal and an internal address signal using the source address and the target address. The internal control signal includes an internal write signal and an internal read signal. Transmission data is transmitted on the pair of data lines during the internal data transmission operation. The plurality of memory banks read the transmission data stored in a region corresponding to the source address in response to the internal read signal, transmit the transmission data on the pair of data lines, and write the transmission data transmitted on the pair of data lines in response to the internal write signal. During the internal data transmission operation, the transmission data is transmitted from the region corresponding to the source address to a region corresponding to the target address, and is not output external to the semiconductor memory device.
Public/Granted literature
- US20110007583A1 Semiconductor memory device and internal data transmission method thereof Public/Granted day:2011-01-13
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