Invention Grant
- Patent Title: Magnetron sputtering cathode mechanism
- Patent Title (中): 磁控溅射阴极机构
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Application No.: US12255062Application Date: 2008-10-21
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Publication No.: US08052852B2Publication Date: 2011-11-08
- Inventor: Guan-Yeu Chu
- Applicant: Guan-Yeu Chu
- Applicant Address: TW Taichung
- Assignee: Wintek Corporation
- Current Assignee: Wintek Corporation
- Current Assignee Address: TW Taichung
- Agency: Thomas, Kayden, Horstemeyer & Risley, LLP
- Priority: TW96143292A 20071115
- Main IPC: C23C14/35
- IPC: C23C14/35

Abstract:
A magnetron sputtering cathode mechanism includes a backing plate, a target, at least one magnetic component and at least one magnet. The backing plate has a first surface and a second surface opposite to the first surface. The first surface has at least one positioning recess, and the target has a bombarded surface and a non-bombarded surface opposite to the bombarded surface. The non-bombarded surface contacts with the first surface and has at least one combining recess. The magnetic component is disposed between the backing plate and the target and has a combining portion and a positioning portion. The combining portion is positioned in the combining recess, and the positioning portion is received in the positioning recess. The magnet is disposed at the second surface. The magnetic component is attracted to the corresponding magnet so as to fix the target at the backing plate.
Public/Granted literature
- US20090127107A1 MAGNETRON SPUTTERING CATHODE MECHANISM Public/Granted day:2009-05-21
Information query
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