Invention Grant
- Patent Title: Method for manufacturing holographic recording medium and method for manufacturing semiconductor device
- Patent Title (中): 全息记录介质的制造方法及半导体装置的制造方法
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Application No.: US11802801Application Date: 2007-05-25
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Publication No.: US08053145B2Publication Date: 2011-11-08
- Inventor: Hideto Ohnuma
- Applicant: Hideto Ohnuma
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2006-149779 20060530
- Main IPC: G03H1/02
- IPC: G03H1/02

Abstract:
To provide a method for manufacturing a holographic recording medium and a method for manufacturing a semiconductor device, by which effects of distortion or irregularities of the surface of an exposure object can be reduced. The method includes the steps of: splitting a laser beam emitted from a laser oscillator into a first laser beam and a second laser beam, and forming a fringe pattern in a holographic recording medium by illuminating the holographic recording medium with the first laser beam through a mask and illuminating the holographic recording medium with the second laser beam. The mask is a substrate having a light-shielding film formed over its surface.
Public/Granted literature
- US20080176145A1 Method for manufacturing holographic recording medium and method for manufacturing semiconductor device Public/Granted day:2008-07-24
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