Invention Grant
- Patent Title: Method for prediction of premature dielectric breakdown in a semiconductor
- Patent Title (中): 用于预测半导体中过早介质击穿的方法
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Application No.: US12061104Application Date: 2008-04-02
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Publication No.: US08053257B2Publication Date: 2011-11-08
- Inventor: Kaushik Chanda , Hazara S. Rathore , Paul S. McLaughlin , Robert D. Edwards , Lawrence A. Clevenger , Andrew P. Cowley , Chih-Chao Yang , Conrad A. Barile
- Applicant: Kaushik Chanda , Hazara S. Rathore , Paul S. McLaughlin , Robert D. Edwards , Lawrence A. Clevenger , Andrew P. Cowley , Chih-Chao Yang , Conrad A. Barile
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Lisa U. Jaklitsch; Katherine S. Brown
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The invention predicts premature dielectric breakdown in a semiconductor. At least one dielectric breakdown mode is calculated for a layer within chips comprising a semiconductor wafer lot. If only one mode is calculated, that is the best calculated mode. If multiple modes can be calculated, a best mode that most accurately represents dielectric breakdown for the semiconductor wafer lot is determined. Premature dielectric breakdown will be associated with any semiconductor with a breakdown voltage less than a predetermined standard deviation from the best calculated mode.
Public/Granted literature
- US20080174334A1 METHOD FOR PREDICTION OF PREMATURE DIELECTRIC BREAKDOWN IN A SEMICONDUCTOR Public/Granted day:2008-07-24
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