Invention Grant
- Patent Title: Piezo-diode cantilever MEMS fabrication method
- Patent Title (中): 压电二极管悬臂MEMS制造方法
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Application No.: US12758879Application Date: 2010-04-13
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Publication No.: US08053266B2Publication Date: 2011-11-08
- Inventor: Changqing Zhan , Paul J. Schuele , John F. Conley, Jr. , John W. Hartzell
- Applicant: Changqing Zhan , Paul J. Schuele , John F. Conley, Jr. , John W. Hartzell
- Applicant Address: US WA Camas
- Assignee: Sharp Laboratories of America, Inc.
- Current Assignee: Sharp Laboratories of America, Inc.
- Current Assignee Address: US WA Camas
- Agency: Law Office of Gerald Maliszewski
- Agent Gerald Maliszewski
- Main IPC: H01L21/324
- IPC: H01L21/324 ; H01L21/84
Abstract:
A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-Site, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam.
Public/Granted literature
- US20100197065A1 Piezo-Diode Cantilever MEMS Fabrication Method Public/Granted day:2010-08-05
Information query
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