Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12318165Application Date: 2008-12-23
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Publication No.: US08053313B2Publication Date: 2011-11-08
- Inventor: Yun-Seok Cho , Sang-Hoon Park , Young-Kyun Jung , Chun-Hee Lee
- Applicant: Yun-Seok Cho , Sang-Hoon Park , Young-Kyun Jung , Chun-Hee Lee
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: Lowe Hauptman Ham & Berner LLP
- Priority: KR10-2008-0030173 20080401
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
In a method of fabricating a semiconductor device on a substrate having a pillar pattern, a gate electrode is formed on the pillar pattern without etching the latter. A conductive pattern is filled between adjacent pillar patterns, a spacer is formed above the conductive pattern and surrounding sidewalls of each pillar pattern, and the gate electrode is formed by etching the conductive pattern using the spacer as an etch barrier.
Public/Granted literature
- US20090242945A1 Semiconductor device and method of fabricating the same Public/Granted day:2009-10-01
Information query
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