Invention Grant
US08053324B2 Method of manufacturing a semiconductor device having improved transistor performance
有权
制造具有改善的晶体管性能的半导体器件的方法
- Patent Title: Method of manufacturing a semiconductor device having improved transistor performance
- Patent Title (中): 制造具有改善的晶体管性能的半导体器件的方法
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Application No.: US11832088Application Date: 2007-08-01
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Publication No.: US08053324B2Publication Date: 2011-11-08
- Inventor: Bradley D. Sucher , Christopher S. Whitesell , Joshua J. Hubregsen , James H. Beatty
- Applicant: Bradley D. Sucher , Christopher S. Whitesell , Joshua J. Hubregsen , James H. Beatty
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/331
- IPC: H01L21/331 ; C23C16/00
Abstract:
In one aspect provides a method of manufacturing a semiconductor device having improved transistor performance. In one aspect, this improvement is achieved by conducting a pre-deposition spacer deposition process wherein a temperature of a bottom region of a furnace is higher than a temperature of in the top region and is maintained for a predetermined period. The pre-deposition temperature is changed to a deposition temperature, wherein a temperature of the bottom region is lower than a temperature of the top region.
Public/Granted literature
- US20110129979A1 Method of Manufacturing a Semiconductor Device Having Improved Transistor Performance Public/Granted day:2011-06-02
Information query
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