Invention Grant
- Patent Title: Forming method of gallium nitride system compound semiconductor layer, transfer method of the same, and substrate structure with the same bonded thereto
- Patent Title (中): 氮化镓系化合物半导体层的形成方法，其转印方法以及与其结合的基板结构
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Application No.: US12611791Application Date: 2009-11-03
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Publication No.: US08053335B2Publication Date: 2011-11-08
- Inventor: Takao Yonehara
- Applicant: Takao Yonehara
- Agency: Canon U.S.A., Inc. IP Division
- Priority: JP2008-282794 20081104
- Main IPC: H01L21/52
- IPC: H01L21/52 ; H01L21/50
Abstract:
A method includes forming a first layer containing silicon oxide on a first substrate, partially removing the first layer to form an exposure portion on the first substrate, depositing amorphous gallium nitride system compound semiconductor on the first substrate with the exposure portion, evaporating the semiconductor on the first layer to form cores of the semiconductor on the exposure portion of the first substrate, forming an epitaxial layer of the semiconductor on the first substrate, and removing the epitaxial layer of the semiconductor on the exposure portion on the first substrate to form a separating groove.
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