Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12659991Application Date: 2010-03-26
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Publication No.: US08053337B2Publication Date: 2011-11-08
- Inventor: Takamitsu Noda
- Applicant: Takamitsu Noda
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-104554 20090422
- Main IPC: H01L21/78
- IPC: H01L21/78
Abstract:
In a method of manufacturing a semiconductor device, a first groove and a second groove each having a width less than that of a scribe line are formed along the scribe line in a first protective film provided below a second protective film which protects element forming regions when a wafer is divided into parts by a laser dicing, and the first groove and the second groove are filled with the second protective film. Then, the laser dicing is performed on a region between the first groove and the second groove along the scribe line from the surface where the second protective film is formed to form a cutting groove that reaches at least a predetermined depth of the multi-layer interconnect.
Public/Granted literature
- US20100273312A1 Method of manufacturing semiconductor device Public/Granted day:2010-10-28
Information query
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