Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12124385Application Date: 2008-05-21
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Publication No.: US08053339B2Publication Date: 2011-11-08
- Inventor: Shunpei Yamazaki , Hideomi Suzawa , Yoshihiro Kusuyama , Koji Ono , Jun Koyama
- Applicant: Shunpei Yamazaki , Hideomi Suzawa , Yoshihiro Kusuyama , Koji Ono , Jun Koyama
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2001-056063 20010228; JP2001-302687 20010928
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 μm or more.
Public/Granted literature
- US20090035922A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2009-02-05
Information query
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