Invention Grant
- Patent Title: Wafer polishing method
- Patent Title (中): 晶圆抛光方法
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Application No.: US12234869Application Date: 2008-09-22
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Publication No.: US08053367B2Publication Date: 2011-11-08
- Inventor: Wei-Min Hsiao
- Applicant: Wei-Min Hsiao
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: J.C. Patents
- Priority: TW96142073A 20071107
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
A wafer polishing method is provided. First, a wafer, having a first surface, a second surface, and a plurality of opening portions depressed on the first surface, is provided. A plastic adhesive is filled in the opening portions and cured later. A polishing step is performed to thin the thickness of the wafer. Therefore, the yield of the wafer in the polishing process can be improved by the protection of the plastic adhesive.
Public/Granted literature
- US20090117832A1 WAFER POLISHING METHOD Public/Granted day:2009-05-07
Information query
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