Method for removing residues from a patterned substrate

Invention Grant

US08053368B2 Method for removing residues from a patterned substrate 失效

Title translation: 从图案化衬底去除残留物的方法

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Patent Title: Method for removing residues from a patterned substrate
Patent Title (中): 从图案化衬底去除残留物的方法
Application No.: US12055648

Application Date: 2008-03-26
Publication No.: US08053368B2

Publication Date: 2011-11-08
Inventor: Sean D. Burns , Matthew E. Colburn , Steven J. Holmes
Applicant: Sean D. Burns , Matthew E. Colburn , Steven J. Holmes
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agent Wenjie Li
Main IPC: H01L21/311
IPC: H01L21/311

Method for removing residues from a patterned substrate

Abstract:

The present invention relates to a method for removing residues from open areas of a patterned substrate involving the steps of providing a layer of a developable anti-reflective coating (DBARC) over a substrate; providing a layer of a photoresist over said DBARC layer; pattern-wise exposing said photoresist layer and said DBARC layer to a radiation; developing said photoresist layer and said DBARC layer with a first developer to form patterned structures in said photoresist and DBARC layers; depositing a layer of a developer soluble material over said patterned structures; and removing said developer soluble material with a second developer.

Abstract(Chinese):

本发明涉及一种用于从图案化衬底的开放区域去除残留物的方法，包括以下步骤：在衬底上提供可显影抗反射涂层（DBARC）的层; 在所述DBARC层上提供一层光致抗蚀剂; 将所述光致抗蚀剂层和所述DBARC层图案化地曝光到辐射; 用第一显影剂显影所述光致抗蚀剂层和所述DBARC层以在所述光致抗蚀剂和DBARC层中形成图案化结构; 在所述图案化结构上沉积一层显影剂可溶性材料; 并用第二显影剂除去所述显影剂可溶性材料。

Public/Granted literature

US20090246958A1 METHOD FOR REMOVING RESIDUES FROM A PATTERNED SUBSTRATE Public/Granted day:2009-10-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀