Invention Grant
- Patent Title: Silicon carbide semiconductor device and method for manufacturing the same
- Patent Title (中): 碳化硅半导体器件及其制造方法
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Application No.: US12376362Application Date: 2007-08-07
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Publication No.: US08053784B2Publication Date: 2011-11-08
- Inventor: Akinori Seki , Yukari Tani , Noriyoshi Shibata
- Applicant: Akinori Seki , Yukari Tani , Noriyoshi Shibata
- Applicant Address: JP Toyota-shi, Aichi-ken JP Nagoya-shi, Aichi
- Assignee: Toyota Jidosha Kabushiki Kaisha,Japan Fine Ceramics Center
- Current Assignee: Toyota Jidosha Kabushiki Kaisha,Japan Fine Ceramics Center
- Current Assignee Address: JP Toyota-shi, Aichi-ken JP Nagoya-shi, Aichi
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Priority: JP2006-215999 20060808
- International Application: PCT/JP2007/065403 WO 20070807
- International Announcement: WO2008/018432 WO 20080214
- Main IPC: H01L29/15
- IPC: H01L29/15
Abstract:
A channel layer (40) for forming a portion of a carrier path between a source electrode (100) and a drain electrode (110) is formed on a drift layer (30). The channel layer (40) includes Ge granular crystals formed on the drift layer (30), and a cap layer covering the Ge granular crystals.
Public/Granted literature
- US20100224884A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2010-09-09
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