Invention Grant
- Patent Title: Semiconductor light emitting device and method for manufacturing the same
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US12201987Application Date: 2008-08-29
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Publication No.: US08053792B2Publication Date: 2011-11-08
- Inventor: Jo Young Lee
- Applicant: Jo Young Lee
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2007-0088286 20070831
- Main IPC: H01L29/20
- IPC: H01L29/20
Abstract:
Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first semiconductor layer; a light emitting structure on one sided portion of the first semiconductor layer; a protection device structure on the other sided portion of the first semiconductor layer; and a first electrode layer on the protection device structure.
Public/Granted literature
- US20090057692A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2009-03-05
Information query
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