Invention Grant
- Patent Title: Hybrid orientation scheme for standard orthogonal circuits
- Patent Title (中): 标准正交电路的混合定向方案
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Application No.: US12431094Application Date: 2009-04-28
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Publication No.: US08053844B2Publication Date: 2011-11-08
- Inventor: Dureseti Chidambarrao
- Applicant: Dureseti Chidambarrao
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Gibb I.P. Law Firm, LLC
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L21/77 ; H01L21/8238

Abstract:
Embodiments herein present device, method, etc. for a hybrid orientation scheme for standard orthogonal circuits. An integrated circuit of embodiments of the invention comprises a hybrid orientation substrate, comprising first areas having a first crystalline orientation and second areas having a second crystalline orientation. The first crystalline orientation of the first areas is not parallel or perpendicular to the second crystalline orientation of the second areas. The integrated circuit further comprises first type devices on the first areas and second type devices on the second areas, wherein the first type devices are parallel or perpendicular to the second type devices. Specifically, the first type devices comprise p-type field effect transistors (PFETs) and the second type devices comprise n-type field effect transistors (NFETs).
Public/Granted literature
- US20090206412A1 HYBRID ORIENTATION SCHEME FOR STANDARD ORTHOGONAL CIRCUITS Public/Granted day:2009-08-20
Information query
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