Invention Grant
- Patent Title: Light sensor receiving light from backside
- Patent Title (中): 光传感器从背面接收光
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Application No.: US11483185Application Date: 2006-07-10
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Publication No.: US08053852B2Publication Date: 2011-11-08
- Inventor: Takashi Noma
- Applicant: Takashi Noma
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Morrison & Foerster LLP
- Main IPC: H01L27/14
- IPC: H01L27/14

Abstract:
The invention is directed to enhancement of performance of a back surface incident type semiconductor device having a light receiving element and a manufacturing method thereof without increasing a manufacturing cost. A supporting body is attached to a front surface of a semiconductor substrate formed with a light receiving element and its pad electrode. Then, the supporting body is etched to form a via hole penetrating the supporting body and exposing the pad electrode. Then, a wiring connected to the pad electrode and extending onto a front surface of the supporting body through the via hole is formed. Lastly, the semiconductor substrate is separated into a plurality of semiconductor dies by dicing. The semiconductor device is mounted so that the supporting body faces a circuit board.
Public/Granted literature
- US20070018263A1 Semiconductor device and manufacturing method of the same Public/Granted day:2007-01-25
Information query
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