A lateral Insulated Gate Bipolar Transistor (LIGBT) includes a semiconductor substrate and an anode region in the semiconductor substrate. A cathode region of a first conductivity type in the substrate is laterally spaced from the anode region, and a cathode region of a second conductivity type in the substrate is located proximate to and on a side of the cathode region of the first conductivity type opposite from the anode region. A drift region in the semiconductor substrate extends between the anode region and the cathode region of the first conductivity type. An insulated gate is operatively coupled to the cathode region of the first conductivity type and is located on a side of the cathode region of the first conductivity type opposite from the anode region. An insulating spacer overlies the cathode region of the second conductivity type. The lateral dimensions of the insulating spacer and the cathode region of the second conductivity type are substantially equal and substantially smaller than the lateral dimension of the cathode region of the first conductivity type.