Invention Grant
- Patent Title: Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
- Patent Title (中): 含磷的掺杂剂以及使用含磷掺杂剂在半导体衬底中形成磷掺杂区域的方法
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Application No.: US12194688Application Date: 2008-08-20
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Publication No.: US08053867B2Publication Date: 2011-11-08
- Inventor: Hong Min Huang , Carol Gao , Zhe Ding , Albert Peng , Ya Qun Liu
- Applicant: Hong Min Huang , Carol Gao , Zhe Ding , Albert Peng , Ya Qun Liu
- Applicant Address: US NJ Morristown
- Assignee: Honeywell International Inc.
- Current Assignee: Honeywell International Inc.
- Current Assignee Address: US NJ Morristown
- Agency: Ingrassia Fisher & Lorenz, PC
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L29/207
Abstract:
Phosphorous-comprising dopants, methods for forming phosphorous-doped regions in a semiconductor material, and methods for fabricating phosphorous-comprising dopants are provided. In one embodiment, a phosphorous-comprising dopant comprises a phosphorous source comprising a phosphorous-comprising salt, a phosphorous-comprising acid, phosphorous-comprising anions, or a combination thereof, an alkaline material, cations from an alkaline material, or a combination thereof, and a liquid medium.
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