Invention Grant
US08053878B2 Substrate, semiconductor device using the same, method for inspecting semiconductor device, and method for manufacturing semiconductor device
有权
基板,使用该半导体装置的半导体装置,半导体装置的检查方法以及半导体装置的制造方法
- Patent Title: Substrate, semiconductor device using the same, method for inspecting semiconductor device, and method for manufacturing semiconductor device
- Patent Title (中): 基板,使用该半导体装置的半导体装置,半导体装置的检查方法以及半导体装置的制造方法
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Application No.: US11979768Application Date: 2007-11-08
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Publication No.: US08053878B2Publication Date: 2011-11-08
- Inventor: Hiroki Iwamura , Naoto Ozawa , Hiroshi Hirai
- Applicant: Hiroki Iwamura , Naoto Ozawa , Hiroshi Hirai
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JPP.2006-303202 20061108
- Main IPC: H01L23/488
- IPC: H01L23/488

Abstract:
A substrate including therein a plurality of conductor layers laminated via insulating layers, the substrate mounting at least one semiconductor integrated circuit, wherein the substrate includes a first electrode terminal connected to the semiconductor integrated circuit, a second electrode terminal connected to a terminal on an upper substrate arranged in a layer over the substrate, and on at least part of the perimeter of the first and second electrode terminals, a third electrode terminal located outside the outer edge of the upper substrate.
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