Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12489006Application Date: 2009-06-22
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Publication No.: US08053893B2Publication Date: 2011-11-08
- Inventor: Junji Noguchi , Takayuki Oshima , Noriko Miura , Kensuke Ishikawa , Tomio Iwaskai , Kiyomi Katsuyama , Tatsuyuki Saito , Tsuyoshi Tamaru , Hizuru Yamaguchi
- Applicant: Junji Noguchi , Takayuki Oshima , Noriko Miura , Kensuke Ishikawa , Tomio Iwaskai , Kiyomi Katsuyama , Tatsuyuki Saito , Tsuyoshi Tamaru , Hizuru Yamaguchi
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2003-083348 20030325
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
Public/Granted literature
- US20090256261A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2009-10-15
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