Invention Grant
- Patent Title: Connection for off-chip electrostatic discharge protection
- Patent Title (中): 连接用于片外静电放电保护
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Application No.: US12573724Application Date: 2009-10-05
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Publication No.: US08053898B2Publication Date: 2011-11-08
- Inventor: Phil P. Marcoux
- Applicant: Phil P. Marcoux
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01L29/40
- IPC: H01L29/40

Abstract:
A method and apparatus for off-chip ESD protection, the apparatus includes an unprotected IC 22 stacked on an ESD protection chip 24 and employing combinations of edge wrap 32 and through-silicon via connectors 44 for electrical connection from an external connection lead 34 on a chip carrier 84 or system substrate 64, to an ESD protection circuit, and to an I/O trace 46 of the unprotected IC 22. In one embodiment the invention provides an ESD-protected stack 50 of unprotected IC chips 52, 54 that has reduced hazard of mechanical and ESD-damage in subsequent handling for assembly and packaging. The method includes a manufacturing method 170 for mass producing embedded edge wrap connectors 32, 38 during the chip manufacturing process.
Public/Granted literature
- US20110079912A1 Connection for Off-Chip Electrostatic Discharge Protection Public/Granted day:2011-04-07
Information query
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