Invention Grant
- Patent Title: Piezoelectric device and method of production thereof
- Patent Title (中): 压电元件及其制造方法
-
Application No.: US12405714Application Date: 2009-03-17
-
Publication No.: US08053955B2Publication Date: 2011-11-08
- Inventor: Shuji Takahashi , Fumihiko Mochizuki
- Applicant: Shuji Takahashi , Fumihiko Mochizuki
- Applicant Address: JP Tokyo
- Assignee: Fujifilm Corporation
- Current Assignee: Fujifilm Corporation
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2008-072769 20080321
- Main IPC: H01L41/047
- IPC: H01L41/047

Abstract:
A piezoelectric device includes a lower electrode, a piezoelectric film and an upper electrode laminated in this order on a support. An oxide film containing a material that forms a lower electrode is formed on a side surface of the piezoelectric film. The piezoelectric device is produced such that an upper electrode and a piezoelectric film are patterned by dry-etching through a mask formed on a side of the upper electrode of the piezoelectric device member and thereafter a side surface of the patterned piezoelectric film (a film adhered to a side wall) is oxidized to form an oxide film.
Public/Granted literature
- US20090236933A1 PIEZOELECTRIC DEVICE AND METHOD OF PRODUCTION THEREOF Public/Granted day:2009-09-24
Information query
IPC分类: