Invention Grant
US08054143B2 Switch circuit and semiconductor device 有权
开关电路和半导体器件

  • Patent Title: Switch circuit and semiconductor device
  • Patent Title (中): 开关电路和半导体器件
  • Application No.: US12447521
    Application Date: 2008-08-08
  • Publication No.: US08054143B2
    Publication Date: 2011-11-08
  • Inventor: Yuji Takahashi
  • Applicant: Yuji Takahashi
  • Applicant Address: JP Tokyo
  • Assignee: NEC Corporation
  • Current Assignee: NEC Corporation
  • Current Assignee Address: JP Tokyo
  • Priority: JP2007-212262 20070816
  • International Application: PCT/JP2008/064321 WO 20080808
  • International Announcement: WO2009/022654 WO 20090219
  • Main IPC: H01P1/10
  • IPC: H01P1/10 H03K17/693
Switch circuit and semiconductor device
Abstract:
A switch circuit for passing or blocking a high-frequency signal includes a correction circuit for correcting an impedance component that exists in the switch circuit and that changes asymmetrically with the direct-current potential as a reference such that impedance as seen from either high-frequency terminal changes symmetrically with the direct-current potential as a reference in response to positive and negative changes that take the direct-current potential of the high-frequency signal as a reference.
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