Invention Grant
- Patent Title: Switch circuit and semiconductor device
- Patent Title (中): 开关电路和半导体器件
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Application No.: US12447521Application Date: 2008-08-08
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Publication No.: US08054143B2Publication Date: 2011-11-08
- Inventor: Yuji Takahashi
- Applicant: Yuji Takahashi
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2007-212262 20070816
- International Application: PCT/JP2008/064321 WO 20080808
- International Announcement: WO2009/022654 WO 20090219
- Main IPC: H01P1/10
- IPC: H01P1/10 ; H03K17/693

Abstract:
A switch circuit for passing or blocking a high-frequency signal includes a correction circuit for correcting an impedance component that exists in the switch circuit and that changes asymmetrically with the direct-current potential as a reference such that impedance as seen from either high-frequency terminal changes symmetrically with the direct-current potential as a reference in response to positive and negative changes that take the direct-current potential of the high-frequency signal as a reference.
Public/Granted literature
- US20100060377A1 SWITCH CIRCUIT AND SEMICONDUCTOR DEVICE Public/Granted day:2010-03-11
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