Invention Grant
US08054446B2 EUV lithography apparatus and method for determining the contamination status of an EUV-reflective optical surface
有权
EUV光刻设备和用于确定EUV反射光学表面的污染状态的方法
- Patent Title: EUV lithography apparatus and method for determining the contamination status of an EUV-reflective optical surface
- Patent Title (中): EUV光刻设备和用于确定EUV反射光学表面的污染状态的方法
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Application No.: US12196075Application Date: 2008-08-21
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Publication No.: US08054446B2Publication Date: 2011-11-08
- Inventor: Dieter Kraus , Dirk Heinrich Ehm , Stefan-Wolfgang Schmidt
- Applicant: Dieter Kraus , Dirk Heinrich Ehm , Stefan-Wolfgang Schmidt
- Applicant Address: DE Oberkochen
- Assignee: Carl Zeiss SMT GmbH
- Current Assignee: Carl Zeiss SMT GmbH
- Current Assignee Address: DE Oberkochen
- Agency: Sughrue Mion, PLLC
- Main IPC: G03B27/52
- IPC: G03B27/52 ; G03B27/42
Abstract:
The invention relates to an EUV lithography apparatus with at least one EUV-reflective optical surface and a cavity ringdown reflectometer adapted to determine the contamination status of the EUV-reflective optical surface for at least one contaminating substance by determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (λm). The invention further relates to a method for determining the contamination status of at least one EUV-reflective optical surface arranged in an EUV lithography apparatus for at least one contaminating substance comprising determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (λm) using a cavity ringdown reflectometer.
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