Invention Grant
- Patent Title: Optical waveguide amplifier using high quantum efficiency silicon nanocrystal embedded silicon oxide
- Patent Title (中): 光波导放大器采用高量子效率硅纳米晶体嵌入式氧化硅
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Application No.: US12259986Application Date: 2008-10-28
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Publication No.: US08054540B2Publication Date: 2011-11-08
- Inventor: Jiandong Huang , Pooran Chandra Joshi , Hao Zhang , Apostolos T. Voutsas
- Applicant: Jiandong Huang , Pooran Chandra Joshi , Hao Zhang , Apostolos T. Voutsas
- Applicant Address: US WA Camas
- Assignee: Sharp Laboratories of America, Inc.
- Current Assignee: Sharp Laboratories of America, Inc.
- Current Assignee Address: US WA Camas
- Agency: Law Office of Gerald Maliszewski
- Agent Gerald Maliszewski
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A method is provided for optical amplification using a silicon (Si) nanocrystal embedded silicon oxide (SiOx) waveguide. The method provides a Si nanocrystal embedded SiOx waveguide, where x is less than 2, having a quantum efficiency of greater than 10%. An optical input signal is supplied to the Si nanocrystal embedded SiOx waveguide, having a first power at a first wavelength in the range of 700 to 950 nm. The Si nanocrystal embedded SiOx waveguide is pumped with an optical source having a second power at a second wavelength in a range of 250 to 550 nm. As a result, an optical output signal having a third power is generated, greater than the first power, at the first wavelength. In one aspect, the third power increases in response to the length of the waveguide strip.
Public/Granted literature
- US20090040599A1 Optical Waveguide Amplifier Using High Quantum Efficiency Silicon Nanocrystal Embedded Silicon Oxide Public/Granted day:2009-02-12
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