Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12400380Application Date: 2009-03-09
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Publication No.: US08054596B2Publication Date: 2011-11-08
- Inventor: Jun Koyama , Yoshifumi Tanada , Hideaki Shishido
- Applicant: Jun Koyama , Yoshifumi Tanada , Hideaki Shishido
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Husch Blackwell LLP
- Priority: JP2008-065980 20080314
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H01C7/12 ; H02H1/00 ; H02H1/04 ; H02H3/22 ; H02H9/06

Abstract:
An element is protected without hampering an actual operation in the case where overvoltage that might damage the element is applied. A semiconductor device includes a first potential supply terminal 100; a second potential supply terminal 101; a protection circuit 107 which includes a voltage divider 102 electrically connected to the first potential supply terminal 100 and the second potential supply terminal 101, a control circuit 103, and a bypass circuit 106; and a functional circuit 108 which is electrically connected to the first potential supply terminal 100 and the second potential supply terminal 101 through the protection circuit 107.
Public/Granted literature
- US20090231021A1 Semiconductor Device Public/Granted day:2009-09-17
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