Invention Grant
- Patent Title: Electrostatic discharge structures and methods of manufacture
- Patent Title (中): 静电放电结构及制造方法
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Application No.: US12489774Application Date: 2009-06-23
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Publication No.: US08054597B2Publication Date: 2011-11-08
- Inventor: Ephrem G. Gebreselasie , Steven H. Voldman
- Applicant: Ephrem G. Gebreselasie , Steven H. Voldman
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Anthony Canale
- Main IPC: H02H3/22
- IPC: H02H3/22

Abstract:
Electrostatic discharge (ESD) structures having a connection to a through wafer via structure and methods of manufacture are provided. The structure includes an electrostatic discharge (ESD) network electrically connected in series to a through wafer via. More specifically, the ESD circuit includes a bond pad and an ESD network located under the bond pad. The ESD circuit further includes a through wafer via structure electrically connected in series directly to the ESD network, and which is also electrically connected to VSS.
Public/Granted literature
- US20100321842A1 Electrostatic Discharge Structures and Methods of Manufacture Public/Granted day:2010-12-23
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