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US08054663B2 Process variation compensated multi-chip memory package 有权
过程变化补偿多芯片存储器封装

Process variation compensated multi-chip memory package
Abstract:
A multi-chip package memory includes an interface chip generating at least one reference signal defined in relation to a reference process variation, and a stacked plurality of memory chips electrically connected to the interface chip via a vertical connection path and receiving the reference clock signal via the vertical connection path, wherein each one of the stacked plurality of memory chips is characterized by a process variation and actively compensates for said process variation in relation to the reference signal.
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