Invention Grant
- Patent Title: Process variation compensated multi-chip memory package
- Patent Title (中): 过程变化补偿多芯片存储器封装
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Application No.: US12264356Application Date: 2008-11-04
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Publication No.: US08054663B2Publication Date: 2011-11-08
- Inventor: Hoe-ju Chung
- Applicant: Hoe-ju Chung
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2008-0025377 20080319
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C7/00 ; G11C8/00

Abstract:
A multi-chip package memory includes an interface chip generating at least one reference signal defined in relation to a reference process variation, and a stacked plurality of memory chips electrically connected to the interface chip via a vertical connection path and receiving the reference clock signal via the vertical connection path, wherein each one of the stacked plurality of memory chips is characterized by a process variation and actively compensates for said process variation in relation to the reference signal.
Public/Granted literature
- US20090237970A1 PROCESS VARIATION COMPENSATED MULTI-CHIP MEMORY PACKAGE Public/Granted day:2009-09-24
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