Invention Grant
US08054674B2 Variable resistive element, manufacturing method for same, and non-volatile semiconductor memory device 有权
可变电阻元件,相同的制造方法和非易失性半导体存储器件

Variable resistive element, manufacturing method for same, and non-volatile semiconductor memory device
Abstract:
Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer.
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