Invention Grant
US08054674B2 Variable resistive element, manufacturing method for same, and non-volatile semiconductor memory device
有权
可变电阻元件,相同的制造方法和非易失性半导体存储器件
- Patent Title: Variable resistive element, manufacturing method for same, and non-volatile semiconductor memory device
- Patent Title (中): 可变电阻元件,相同的制造方法和非易失性半导体存储器件
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Application No.: US12598642Application Date: 2008-04-07
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Publication No.: US08054674B2Publication Date: 2011-11-08
- Inventor: Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano
- Applicant: Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano
- Applicant Address: JP Osaka JP Ibaraki
- Assignee: Sharp Kabushiki Kaisha,National Institute of Advanced Industrial Science and Technology
- Current Assignee: Sharp Kabushiki Kaisha,National Institute of Advanced Industrial Science and Technology
- Current Assignee Address: JP Osaka JP Ibaraki
- Agency: Nixon & Vanderhye P.C.
- Priority: JP2007-126016 20070510; JP2007-292763 20071112
- International Application: PCT/JP2008/056859 WO 20080407
- International Announcement: WO2008/142919 WO 20081127
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer.
Public/Granted literature
- US20100172170A1 VARIABLE RESISTIVE ELEMENT, MANUFACTURING METHOD FOR SAME, AND NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2010-07-08
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