Invention Grant
US08054689B2 Memory card using multi-level signaling and memory system having the same
有权
存储卡使用多级信令和存储系统具有相同的功能
- Patent Title: Memory card using multi-level signaling and memory system having the same
- Patent Title (中): 存储卡使用多级信令和存储系统具有相同的功能
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Application No.: US12487381Application Date: 2009-06-18
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Publication No.: US08054689B2Publication Date: 2011-11-08
- Inventor: Seok-Won Heo , Min-Soo Kang , Chang-Duck Lee , Soong-Man Shin
- Applicant: Seok-Won Heo , Min-Soo Kang , Chang-Duck Lee , Soong-Man Shin
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2008-0057973 20080619
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A memory card including a memory controller, a memory system and a method to control a memory are provided. The memory card includes a flash memory, a memory interface outputting a writing data signal to be written into the flash memory, and a multi-level converter transforming the writing data signal into a writing voltage signal to be provided to the flash memory. The writing voltage signal has one of different voltage levels in accordance with plural bits of the writing data signal.
Public/Granted literature
- US20090316485A1 MEMORY CARD USING MULTI-LEVEL SIGNALING AND MEMORY SYSTEM HAVING THE SAME Public/Granted day:2009-12-24
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