Invention Grant
US08054709B2 Power control circuit and semiconductor memory device using the same
有权
功率控制电路和使用其的半导体存储器件
- Patent Title: Power control circuit and semiconductor memory device using the same
- Patent Title (中): 功率控制电路和使用其的半导体存储器件
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Application No.: US12459345Application Date: 2009-06-30
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Publication No.: US08054709B2Publication Date: 2011-11-08
- Inventor: Tae Jin Kang
- Applicant: Tae Jin Kang
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Cooper & Dunham LLP
- Agent John P. White
- Priority: KR10-2008-0121187 20081202
- Main IPC: G11C5/14
- IPC: G11C5/14
Abstract:
A semiconductor memory device comprises a power control circuit for outputting a power voltage in a read operation period and a write operation period, and an internal circuit operating by the power voltage supplied thereto.
Public/Granted literature
- US20100135098A1 Power control circuit and semiconductor memory device using the same Public/Granted day:2010-06-03
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