Invention Grant
- Patent Title: Semiconductor power conversion apparatus and method of manufacturing the same
- Patent Title (中): 半导体功率转换装置及其制造方法
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Application No.: US12526854Application Date: 2008-02-20
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Publication No.: US08058554B2Publication Date: 2011-11-15
- Inventor: Hideo Nakamura , Tomoyuki Watanabe , Hirotaka Ohno , Nobuaki Inagaki
- Applicant: Hideo Nakamura , Tomoyuki Watanabe , Hirotaka Ohno , Nobuaki Inagaki
- Applicant Address: JP Aichi-Ken
- Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee Address: JP Aichi-Ken
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-042205 20070222
- International Application: PCT/JP2008/053348 WO 20080220
- International Announcement: WO2008/102914 WO 20080828
- Main IPC: H02G5/00
- IPC: H02G5/00

Abstract:
A bus bar has a lead portion and a bus bar portion which are integrally shaped. The lead portion is provided in such a shape that branches from the bus bar portion. A part of the lead portion forms a connection part directly electrically connected with a transistor electrode and a diode electrode by a connecting material such as solder. The thickness of the lead portion including the connection part is made smaller than the thickness of the bus bar portion. Accordingly, such an interconnection structure can be provided in which the electrode of the semiconductor device and the bus bar are electrically directly connected with each other and thermal stress at the connection part therebetween can be relieved.
Public/Granted literature
- US20100089607A1 SEMICONDUCTOR POWER CONVERSION APPARATUS AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-04-15
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