Invention Grant
US08058680B2 Nonvolatile semiconductor memory with erase gate and its manufacturing method
有权
具有擦除栅极的非易失性半导体存储器及其制造方法
- Patent Title: Nonvolatile semiconductor memory with erase gate and its manufacturing method
- Patent Title (中): 具有擦除栅极的非易失性半导体存储器及其制造方法
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Application No.: US12314977Application Date: 2008-12-19
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Publication No.: US08058680B2Publication Date: 2011-11-15
- Inventor: Eiji Io
- Applicant: Eiji Io
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-338124 20071227
- Main IPC: H01L29/423
- IPC: H01L29/423
Abstract:
A nonvolatile semiconductor memory device includes a semiconductor substrate, a select gate formed above the semiconductor substrate, a floating gate formed above the semiconductor substrate and an erase gate positioned lower than an upper surface of the floating gate, and opposite an edge of a lower surface of the floating gate.
Public/Granted literature
- US20090166708A1 Nonvolatile semiconductor memory with erase gate and its manufacturing method Public/Granted day:2009-07-02
Information query
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