Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12232221Application Date: 2008-09-12
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Publication No.: US08058684B2Publication Date: 2011-11-15
- Inventor: Yuichi Nakao
- Applicant: Yuichi Nakao
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2007-238180 20070913; JP2007-238879 20070914
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor device according to the present invention includes: a semiconductor layer made of silicon; a trench formed by digging in from a top surface of the semiconductor layer; a gate insulating film formed on an inner wall surface of the trench and made of silicon oxide; a gate electrode embedded in the trench via the gate insulating film and made of a polysilicon doped with an impurity; and an oxidation-resistant metal film disposed on a top surface of the gate electrode and covering the top surface.
Public/Granted literature
- US20090072305A1 Semiconductor device and method for manufacturing the same Public/Granted day:2009-03-19
Information query
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