Invention Grant
- Patent Title: Composite material substrate
- Patent Title (中): 复合材料基材
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Application No.: US12551534Application Date: 2009-08-31
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Publication No.: US08058705B2Publication Date: 2011-11-15
- Inventor: Po-Chun Liu , Wen-Yueh Liu , Chih-Ming Lai , Yih-Der Guo , Jenq-Dar Tsay
- Applicant: Po-Chun Liu , Wen-Yueh Liu , Chih-Ming Lai , Yih-Der Guo , Jenq-Dar Tsay
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW95120186A 20060607
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
A composite material substrate having patterned structure includes a substrate, a first dielectric layer, a second dielectric layer, and a nitride semiconductor material. Herein, the first dielectric layer is stacked on the substrate, the second dielectric layer is stacked on the first dielectric layer, and the nitride semiconductor material is stacked on the second dielectric layer and is characterized by a plurality of patterns thereon.
Public/Granted literature
- US20100013054A1 COMPOSITE MATERIAL SUBSTRATE Public/Granted day:2010-01-21
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