Invention Grant
- Patent Title: Switch with improved biasing
- Patent Title (中): 切换具有改进的偏置
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Application No.: US12623197Application Date: 2009-11-20
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Publication No.: US08058922B2Publication Date: 2011-11-15
- Inventor: Marco Cassia
- Applicant: Marco Cassia
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM, Incorporated
- Current Assignee: QUALCOMM, Incorporated
- Current Assignee Address: US CA San Diego
- Agent Ramin Mobarhan
- Main IPC: H03K3/01
- IPC: H03K3/01

Abstract:
Switches with improved biasing and having better isolation and reliability are described. In an exemplary design, a switch is implemented with a set of transistors, a set of resistors, and an additional resistor. The set of transistors is coupled in a stacked configuration, receives an input signal, and provides an output signal. The set of resistors is coupled to the gates of the set of transistors. The additional resistor is coupled to the set of resistors and receives a control signal for the set of transistors. The resistors reduce signal loss through parasitic capacitances of the transistors when they are turned on. The resistors also help split the signal swing of the input signal approximately evenly across the transistors when they are turned off, which may improve reliability of the transistors. The switch may be used in a switchplexer, a power amplifier (PA) module, etc.
Public/Granted literature
- US20110025403A1 SWITCH WITH IMPROVED BIASING Public/Granted day:2011-02-03
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