Invention Grant
US08059449B2 Phase change device having two or more substantial amorphous regions in high resistance state
有权
具有两个或多个具有高电阻状态的实质非晶区域的相变装置
- Patent Title: Phase change device having two or more substantial amorphous regions in high resistance state
- Patent Title (中): 具有两个或多个具有高电阻状态的实质非晶区域的相变装置
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Application No.: US12717850Application Date: 2010-03-04
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Publication No.: US08059449B2Publication Date: 2011-11-15
- Inventor: Yen-Hao Shih , Chieh-Fang Chen , Hsiang-Lan Lung
- Applicant: Yen-Hao Shih , Chieh-Fang Chen , Hsiang-Lan Lung
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
Memory devices are described herein along with method for operating the memory device. A memory cell as described herein includes a first electrode and a second electrode. The memory cell also comprises phase change material having first and second active regions arranged in series along an inter-electrode current path between the first and second electrode.
Public/Granted literature
- US20100165728A1 PHASE CHANGE DEVICE HAVING TWO OR MORE SUBSTANTIAL AMORPHOUS REGIONS IN HIGH RESISTANCE STATE Public/Granted day:2010-07-01
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