Invention Grant
US08059459B2 Semiconductor memory having both volatile and non-volatile functionality and method of operating
有权
具有易失性和非易失性功能以及操作方法的半导体存储器
- Patent Title: Semiconductor memory having both volatile and non-volatile functionality and method of operating
- Patent Title (中): 具有易失性和非易失性功能以及操作方法的半导体存储器
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Application No.: US12257023Application Date: 2008-10-23
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Publication No.: US08059459B2Publication Date: 2011-11-15
- Inventor: Yuniarto Widjaja
- Applicant: Yuniarto Widjaja
- Applicant Address: US CA San Jose
- Assignee: Zeno Semiconductor, Inc.
- Current Assignee: Zeno Semiconductor, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Law Office of Alan W. Cannon
- Agent Alan W. Cannon
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C14/00

Abstract:
Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor storage device includes a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory. The device includes a floating gate or trapping latter for storing data as non-volatile memory, the device operating as volatile memory when power is applied to the device, and the device storing data from the volatile memory, as non-volatile memory when power to the device is interrupted.
Public/Granted literature
- US20090109750A1 SEMICONDUCTOR MEMORY HAVING BOTH VOLATILE AND NON-VOLATILE FUNCTIONALITY AND METHOD OF OPERATING Public/Granted day:2009-04-30
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