Invention Grant
- Patent Title: Memory using multiple supply voltages
- Patent Title (中): 内存使用多个电源电压
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Application No.: US12487791Application Date: 2009-06-19
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Publication No.: US08059482B2Publication Date: 2011-11-15
- Inventor: Andrew C. Russell , Prashant U. Kenkare , Shayan Zhang
- Applicant: Andrew C. Russell , Prashant U. Kenkare , Shayan Zhang
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Joanna C. Chiu; James L. Clingan, Jr.
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
A memory has a method of operating that includes performing operations of a first type and a second type. A first voltage is coupled to a power supply node of a first memory cell of a memory array during a first operation of the first type. The first voltage is decoupled from the power supply node in response to terminating the first operation of the first type so as to allow the power supply node to drift. If the power supply node drifts to a second voltage, a power supply source is coupled to the power supply node. This is useful in reducing power in the circuit that produces the first voltage.
Public/Granted literature
- US20100322027A1 MEMORY USING MULTIPLE SUPPLY VOLTAGES Public/Granted day:2010-12-23
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