Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12355131Application Date: 2009-01-16
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Publication No.: US08063370B2Publication Date: 2011-11-22
- Inventor: Robert Hannebauer
- Applicant: Robert Hannebauer
- Applicant Address: KR CA
- Assignee: Hanvision Co., Ltd.,Lumiense Photonics Inc.
- Current Assignee: Hanvision Co., Ltd.,Lumiense Photonics Inc.
- Current Assignee Address: KR CA
- Agency: Cantor Colburn LLP
- Main IPC: G01J5/20
- IPC: G01J5/20

Abstract:
A micro-bolometer type infrared (IR) sensing device is provided. The IR sensing device includes an absorbed heat discharging part and a sensing structure part formed as bean structure, spaced apart from the absorbed heat discharging part, supported at least at one end on the absorbed heat discharging part, and discharging heat absorbed in the sensing structure part by being elastically deformed and thus touching the absorbed heat discharging part. The sensing structure part includes a sensing part with variation in secondary attribute according to heat and a light-absorbing part formed into one unit with the sensing part in a manner to surround the sensing part as seen in section view, and converting energy of incident photons into heat. The sensing structure part discharges heat absorbed therein by being elastically deformed and thus touching the absorbed heat discharge part spaced apart downward from the sensing structure part.
Public/Granted literature
- US20100181486A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-07-22
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