Invention Grant
- Patent Title: Semiconductor crystal high resolution imager
- Patent Title (中): 半导体晶体高分辨率成像仪
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Application No.: US11662870Application Date: 2005-09-30
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Publication No.: US08063380B2Publication Date: 2011-11-22
- Inventor: Craig S. Levin , James Matteson
- Applicant: Craig S. Levin , James Matteson
- Applicant Address: US CA Stanford US CA Oakland
- Assignee: The Board of Trustees of the Leland Stanford Junior University,The Regents of the University of California
- Current Assignee: The Board of Trustees of the Leland Stanford Junior University,The Regents of the University of California
- Current Assignee Address: US CA Stanford US CA Oakland
- Agency: Greer, Burns & Crain Ltd.
- International Application: PCT/US2005/035203 WO 20050930
- International Announcement: WO2006/039494 WO 20060413
- Main IPC: G01T1/24
- IPC: G01T1/24
Abstract:
A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).
Public/Granted literature
- US20080042070A1 Semiconductor Crystal High Resolution Imager Public/Granted day:2008-02-21
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