Invention Grant
- Patent Title: Hybrid-mode LDMOS
- Patent Title (中): 混合模式LDMOS
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Application No.: US11927805Application Date: 2007-10-30
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Publication No.: US08063443B2Publication Date: 2011-11-22
- Inventor: Jun Cai
- Applicant: Jun Cai
- Applicant Address: US MA South Portland
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US MA South Portland
- Agency: Hiscock & Barclay, LLP
- Agent Thomas R. FitzGerald, Esq.
- Main IPC: H01L27/07
- IPC: H01L27/07
Abstract:
An MOS-bipolar hybrid-mode LDMOS device has a main gate input and a control gate input wherein the device operates in an MOS mode when both gate inputs are enabled, and operates in a bipolar mode when the main gate input is enabled and the control gate input is disabled. The device can drive the gate of a power MOSFET to deliver the high current required by the power MOSFET while in the bipolar mode, and provide a fully switching between supply voltage and ground to the gate of the power MOSFET while in the MOS mode.
Public/Granted literature
- US20090108346A1 HYBRID-MODE LDMOS Public/Granted day:2009-04-30
Information query
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