Invention Grant
- Patent Title: Semiconductor devices and methods of manufacture thereof
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US12626496Application Date: 2009-11-25
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Publication No.: US08063449B2Publication Date: 2011-11-22
- Inventor: Jin-Ping Han , Thomas W. Dyer , Henry Utomo , Rajendran Krishnasamy
- Applicant: Jin-Ping Han , Thomas W. Dyer , Henry Utomo , Rajendran Krishnasamy
- Applicant Address: DE Neubiberg US NY Armonk
- Assignee: Infineon Technologies AG,International Business Machines Corporation
- Current Assignee: Infineon Technologies AG,International Business Machines Corporation
- Current Assignee Address: DE Neubiberg US NY Armonk
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/78
- IPC: H01L29/78

Abstract:
Semiconductor devices and methods of manufacture thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a semiconductor wafer, forming at least one isolation structure within the semiconductor wafer, and forming at least one feature over the semiconductor wafer. A top portion of the at least one isolation structure is removed, and a liner is formed over the semiconductor wafer, the at least one feature, and the at least one isolation structure. A fill material is formed over the liner. The fill material and the liner are removed from over at least a portion of a top surface of the semiconductor wafer.
Public/Granted literature
- US20100065922A1 Semiconductor Devices and Methods of Manufacture Thereof Public/Granted day:2010-03-18
Information query
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