Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
-
Application No.: US13020169Application Date: 2011-02-03
-
Publication No.: US08063691B2Publication Date: 2011-11-22
- Inventor: Hiroyuki Mizuno , Yusuke Kanno , Kazumasa Yanagisawa , Yoshihiko Yasu , Nobuhiro Oodaira
- Applicant: Hiroyuki Mizuno , Yusuke Kanno , Kazumasa Yanagisawa , Yoshihiko Yasu , Nobuhiro Oodaira
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, P.C.
- Priority: JP2002-017838 20020128
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
A semiconductor integrated circuit device provided with a first circuit block BLK1, a second circuit block DRV1 and a conversion circuit MIO1 for connecting the first circuit block to the second circuit block. The first circuit block includes a first mode for applying a supply voltage and a second mode for shutting off the supply voltage. The conversion circuit is provided with a function for maintaining the potential of an input node of the second circuit block at an operation potential, thereby suppressing a penetrating current flow when the first circuit block is in the second mode. The conversion circuit (MIO1 to MIO4) are commonly used for connecting circuit blocks.
Public/Granted literature
- US20110133827A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2011-06-09
Information query