Invention Grant
- Patent Title: Thin film transistor integrated circuit device, active matrix display device, and manufacturing methods of the same
- Patent Title (中): 薄膜晶体管集成电路器件，有源矩阵显示器件及其制造方法
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Application No.: US10581035Application Date: 2004-11-26
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Publication No.: US08064003B2Publication Date: 2011-11-22
- Inventor: Tadahiro Ohmi , Akihiro Morimoto , Teruhiko Suzuki , Takeyoshi Kato
- Applicant: Tadahiro Ohmi , Akihiro Morimoto , Teruhiko Suzuki , Takeyoshi Kato
- Applicant Address: JP Sendai-shi JP Tokyo
- Assignee: Tadahiro Ohmi,Zeon Corporation
- Current Assignee: Tadahiro Ohmi,Zeon Corporation
- Current Assignee Address: JP Sendai-shi JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2003-400300 20031128
- International Application: PCT/JP2004/017557 WO 20041126
- International Announcement: WO2005/057530 WO 20050623
- Main IPC: G02F1/136
- IPC: G02F1/136
Abstract:
There is provided an active matrix display device including a flattening layer formed so as to surround a source electrode wiring, a drain electrode wiring, and a signal line, so that the source electrode wiring, the drain electrode wiring, and the signal line form substantially the same surface with the flattening layer.
Public/Granted literature
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