Invention Grant
- Patent Title: Multi-valued ROM using carbon-nanotube and nanowire FET
- Patent Title (中): 使用碳纳米管和纳米线FET的多值ROM
-
Application No.: US12560040Application Date: 2009-09-15
-
Publication No.: US08064253B2Publication Date: 2011-11-22
- Inventor: Bipul C. Paul
- Applicant: Bipul C. Paul
- Applicant Address: US DC Washington
- Assignee: Toshiba America Research, Inc.
- Current Assignee: Toshiba America Research, Inc.
- Current Assignee Address: US DC Washington
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A multivalued memory device which includes a first multivalued memory transistor and a second multivalued memory transistor, wherein each transistor has a channel made from at least one carbon nanotube or nanowire, wherein data is stored by varying the number of carbon nanotubes or nanowires used in the channel, wherein the channel is the at least one carbon nanotube or nanowire which allows current to flow through it.
Public/Granted literature
- US20110063905A1 MULTI-VALUED ROM USING CARBON-NANOTUBE AND NANOWIRE FET Public/Granted day:2011-03-17
Information query
