Invention Grant
- Patent Title: Ornand flash memory and method for controlling the same
- Patent Title (中): Ornand闪存及其控制方法
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Application No.: US11974295Application Date: 2007-10-11
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Publication No.: US08064264B2Publication Date: 2011-11-22
- Inventor: Naoharu Shinozaki , Masao Taguchi , Akira Ogawa , Takuo Ito
- Applicant: Naoharu Shinozaki , Masao Taguchi , Akira Ogawa , Takuo Ito
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Priority: JP2006-279418 20061013
- Main IPC: G11C16/06
- IPC: G11C16/06

Abstract:
A semiconductor device that includes: a memory cell array that includes non-volatile memory cells; an area that is contained in the memory cell array and stores area data; a first storage unit that holds data transferred from the memory cell array, and outputs the data; and a control circuit that selects between a primary reading mode for causing the first storage unit to hold the area data transferred from the memory cell array and to output the area data, and a secondary reading mode for causing the first storage unit to hold a plurality of pieces of divisional data formed by dividing the area data and transferred from the memory cell array and to output the divisional data.
Public/Granted literature
- US20080098165A1 Semiconductor device and method of controlling the same Public/Granted day:2008-04-24
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