Invention Grant
- Patent Title: Programming bit alterable memories
- Patent Title (中): 编程位可变记忆
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Application No.: US12012211Application Date: 2008-01-31
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Publication No.: US08064265B2Publication Date: 2011-11-22
- Inventor: Meenatchi Jagasivamani , Richard Fackenthal , Ferdinando Bedeschi , Enzo Donze
- Applicant: Meenatchi Jagasivamani , Richard Fackenthal , Ferdinando Bedeschi , Enzo Donze
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
Program failures during programming can be corrected during reading using an error correcting code. This allows an array to pass programming more readily, speeding the operation of the memory and avoiding the need to continually reprogram or to issue an error message that the programming was unsuccessful. This makes the memory more user friendly and robust.
Public/Granted literature
- US20090196092A1 Programming bit alterable memories Public/Granted day:2009-08-06
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