Invention Grant
US08064271B2 Static random access memory device having bit line voltage control for retain till accessed mode and method of operating the same
有权
具有用于保持直到访问模式的位线电压控制的静态随机存取存储器件及其操作方法
- Patent Title: Static random access memory device having bit line voltage control for retain till accessed mode and method of operating the same
- Patent Title (中): 具有用于保持直到访问模式的位线电压控制的静态随机存取存储器件及其操作方法
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Application No.: US11237082Application Date: 2005-09-28
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Publication No.: US08064271B2Publication Date: 2011-11-22
- Inventor: Theodore W. Houston
- Applicant: Theodore W. Houston
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G11C7/10
- IPC: G11C7/10
Abstract:
A static random-access memory (SRAM) and a method of controlling bit line voltage. In one embodiment, the SRAM includes: (1) an array of SRAM cells organized in rows and columns, (2) bit lines associated with the columns, (3) a high voltage power supply configured to supply a high supply voltage, (4) a low voltage power supply configured to supply a low supply voltage, (5) bit line precharge circuitry configured to precharge at least one of the bit lines to a first voltage and (6) standby circuitry configured to maintain a voltage of the at least one bit line at least a second voltage, the second voltage being lower than the first voltage and higher than the low supply voltage.
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